Dependence of the High-Power Composite Transistor’s Output Current-Voltage Characteristic on the Parameters of the Device Structure Internal Elements
DOI:
https://doi.org/10.24160/1993-6982-2018-1-47-52Keywords:
transistor, induction transistor, composite switch, drain current, gateAbstract
The output current–voltage characteristic of a high-power composite static induction MOSFET transistor (SIT) is investigated. The main switching power of the composite switch is concentrated in the high-voltage SIT which is connected in series with a power assembly consisting of two low-voltage MOSFETs serving as opposite-phase control elements. The first MOSFET (MOSFET1) is located in the power current circuit and controls the composite switch output current through the gate circuit. The second MOSFET (MOSFET2) is connected to the SIT gate and serves to decrease the residual current when the composite switch is closed and to protect it from thermal and current overloads. It is found that the output current-voltage characteristic contains three main sections, the characteristics and parameters of which are determined by the operation modes of the combined circuit’s main constituent elements. The first two sections can be attributed to the classical switch saturation zone and to the zone of its active mode of operation. The third section is characterized by a "jump" of the switch output current which is not typical for the classical versions of the pentode-type current-voltage characteristic. Additional investigations were carried out to explain the specific features of the composite switch output current–voltage characteristic. Three current sensors were embedded into the composite circuit structure for the possibility to measure the SIT drain current, as well as the drain currents of the control assembly’s MOSFET1 and MOSFET2. The output characteristic of the composite switch itself and three additional current-voltage characteristics of the circuits with embedded current sensors were taken at the same control voltage applied to the MOSFET1 gate circuit. It has been shown that the output current-voltage characteristic can be used for determining the amplifying parameters of the SIT’s internal elements, a feature that opens the possibility to monitor the operation of a high-power composite switch in the current and thermal overloading modes and also to minimize static power losses in its structure.
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Для цитирования: Воронин П.А., Воронин И.П., Рашитов П.А. Влияние параметров внутренних элементов структуры на выходную вольт-амперную характеристику мощного составного транзистора // Вестник МЭИ. 2018. № 1. С. 47—52. DOI: 10.24160/1993-6982-2018-1-47-52.
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For citation: Voronin P.А., Voronin I.P., Rashitov P.А. Dependence of the High-Power Composite Transistor’s Output Current-
Voltage Characteristic on the Parameters of the Device Structure Internal Elements. MPEI Vestnik. 2018;1:47—52. (in Russian).DOI: 10.24160/1993-6982-2018-1-47-52.
